Thin PZT‐based ferroelectric capacitors

Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications

1 min read · Sun, Apr 26 2015

Thin PZT‐based ferroelectric capacitors silicon memory applications

Mohamed T. Ghoneim, et al., "Thin PZT‐based ferroelectric capacitors on flexible silicon for nonvolatile memory applications." Advanced Electronic Materials 1 (6), 2015, 1500045. A flexible version of traditional thin lead zirconium titanate ((Pb1.1Zr0.48Ti0.52O3)‐(PZT)) based ferroelectric random access memory (FeRAM) on silicon shows record performance in flexible arena. The thin PZT layer requires lower operational voltages to achieve coercive electric fields, reduces the sol‐gel coating cycles required (i.e., more cost‐effective), and, fabrication wise, is more suitable for further scaling